Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675508 | Thin Solid Films | 2007 | 4 Pages |
Abstract
The influence of the thickness of gallium oxide buffer layer onto electrical, photovoltaic and luminescent properties of ITO (indium tin oxide)–GaSe heterojunctions is investigated. It is established that introducing a Ga2O3 layer with a thickness up to 5–6 nm to the ITO–GaSe heterojunctions leads to changing charge transfer mechanisms; to increasing the open-circuit voltage Voc more that twice (thus the situation when Voc considerably exceeds the built-in potential is realized); to increasing of electroluminescence intensity more, than by an order of magnitude; and also to increasing solar efficiency more than twice in comparison with structures, in which a gallium oxide layer was not grown intentionally.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.I. Drapak, V.M. Katerynchyk, Z.D. Kovalyuk,