| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675554 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Correlation functions between the OES signals assigned to silicon and oxygen atoms from plasma (gas phase) and the SiOx layer composition (infrared and energy dispersive X-ray investigated) have been found. Based on these functions, the OES plasma monitoring is proposed as a tool to control in-situ and in direct time the SiOx layer composition.
Related Topics
Physical Sciences and Engineering
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Authors
Nicolae Tomozeiu,