| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675560 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Tuning of structural and electrical properties of indium oxide (In2O3) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In2O3(0001) and body-centered cubic In2O3(001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ch.Y. Wang, V. Cimalla, H. Romanus, Th. Kups, M. Niebelschütz, O. Ambacher,