Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

The structural and electrical properties of La0.75Sr0.25MnO3 (LSMO) film on Bi4Ti3O12 (BTO)/CeO2/YSZ buffered Si1−xGex/Si (0.05 ≤ x ≤ 0.2 for compressive strain), blank Si, and Si1−yCy/Si (y = 0.01 for tensile) were studied. X-ray high resolution reciprocal lattice mapping (HRRLM) and atomic force microscopy (AFM) show that structural properties of LSMO and buffer oxide layers are strongly related to the strain induced by amount of Ge and C contents. The RMS roughness of LSMO on Si1−xGex/Si has a tendency to increase with increasing of Ge content. Electrical properties of LSMO film with Ge content up to 10% are slightly improved compared to blank Si whereas higher resistivity values were obtained for the samples with higher Ge content.