Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675586 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of μc-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, Xc, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of μc-Si:H films with a high crystalline content is enhanced and the stability of μc-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP μc-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of μc-Si:H films.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jinhua Gu, Meifang Zhu, Liujiu Wang, Fengzhen Liu, Bingqing Zhou, Kun Ding, Guohua Li,