Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

We report on the growth of thin, n-type, 4H-SiC epilayers on (0001) 4H-SiC substrates with uniform doping depth profile. The initial etching of the material before growth is studied to avoid affecting the starting material in the case of regrowth. Variation of the growth rate and its effect on nitrogen incorporation during the first few minutes of the growth have been studied using delta doped demarcation layers. Different growth conditions at the beginning of the growth have been tested in order to grow abrupt layers with a flat doping profile with a variation < ± 1%.