| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675589 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Thin films of a-Si0.8C0.2:H are deposited by ion beam sputtering combined with the simultaneous irradiation of hydrogen atoms delivered by a thermal hydrogen atom source. Elemental composition and bonding structure of the films are analysed by XPS, RBS, ERD, and FTIR. The hydrogen concentration can be varied in a controlled manner. Up to concentrations of 5%, the hydrogen is exclusively incorporated in single Si-H bonds.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.G. Tschersich, U. Littmark, W. Beyer,