Characterization of AgGaSe2 thin films grown by post annealing method

AgGaSe2 thin films were prepared on quartz glass by using an evaporation method at room temperature. Some of the samples were annealed at temperatures from 100 to 600 °C in a nitrogen atmosphere for 10 min. X-ray diffraction showed that single phase AgGaSe2 could be grown at an annealing temperature of 600 °C. From transmittance and reflectance spectra, an absorption coefficient of 105 cm− 1 around bandgap region and bandgap energy of 1.787 eV could be obtained.