| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675608 | Thin Solid Films | 2006 | 4 Pages |
Abstract
We have grown ErP on Ga0.52In0.48P (001) lattice-matched to GaAs and on InP (001) by low-pressure organometallic vapor phase epitaxy and investigated the surface morphology of ErP layers. Lattice-mismatch in ErP/Ga0.52In0.48P/GaAs heterostructures (Îa / a = â 0.8%) is much less than that of ErP/InP heterostructures (â 4.5%). Extended X-ray absorption fine structure measurement revealed that Er exists in the form of ErP rock-salt structure in both samples. The estimated growth rate of ErP on Ga0.52In0.48P is 1.8 ML/h. Our results demonstrate that ErP on Ga0.52In0.48P has smaller surface roughness than ErP on InP. Moreover, an ErP layer exists underneath the surface about 2 ML and the surface roughness does not depend on the ErP thickness in the range of our experiments (2.2-13.7 ML).
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Atsushi Koizumi, Hiroyuki Ohnishi, Tomohiro Inoue, Takeshi Yamauchi, Ichirou Yamakawa, Hironori Ofuchi, Masao Tabuchi, Arao Nakamura, Yoshikazu Takeda,