| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675622 | Thin Solid Films | 2006 | 4 Pages |
Abstract
High quality La2 / 3Ba1 / 3MnO3 (LBMO), La2 / 3Ca1 / 3MnO3 (LCaMO) and La2 / 3Ce1 / 3MnO3 (LCeMO) thin films were grown on Nb 0.1 wt.% doped conducting SrTiO3(100) (STON) substrates. Asymmetric current–voltage relations measured for the LBMO/STON, LCaMO/STON and LCeMO/STON heterostructures at T = 78/300 K certified hole-doping of the manganite films. The diffusion voltage, corresponding to a steep current increase at forward bias has been estimated. The LCaMO/STON heterojunction showed possible impact of interfacial strain on the rectifying behavior, meanwhile, the LaCeMO/STON heterostructures demonstrated evidence of phase separation of the manganite film at the interface.
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Authors
B. Vengalis, J. Devenson, K. Šliužienė, R. Butkutė, M.A. Rosa, V. Lisauskas, M. Godinho, A.K. Oginskis, F. Anisimovas,