Article ID Journal Published Year Pages File Type
1675623 Thin Solid Films 2006 4 Pages PDF
Abstract

Sapphire substrates annealed at 1200 °C in N2 : O2 (3 : 1) developed terrace-and-step morphology, ideal for III-nitride growth by molecular beam epitaxy. In situ treatment of sapphire substrates, using Ga deposition and desorption prior to growth, is shown to be negative for GaN growth. Nitridation transforms the sapphire substrate surface to a lateral structure similar to AlN (mismatch < 2.5%). The surface lattice parameters after nitridation did not depend on the substrate temperature. AlN nucleation layer growth conditions have been optimized for growth of GaN. Ideal Al / N flux ratio was found to be 0.6 for a 9 nm thick nucleation layer.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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