| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675626 | Thin Solid Films | 2006 | 4 Pages |
Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% @ 10 GHz to 33% at 40 GHz.
