Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675660 | Thin Solid Films | 2006 | 4 Pages |
Abstract
We present a study of Ge islands formation on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS) and atomic force microscopy (AFM). Samples were prepared by magnetron sputtering of a 5 nm thick Ge layer in a very high vacuum on Si(100) substrate held at different temperatures. The vertical cut (perpendicular to the surface) of the experimental 2D GISAXS pattern has been fitted using a Guinier approximation. The optimum temperature for the islands formation was 650 °C. At this temperature, islands grow in conical shape with very similar dimensions; however, inter-island distances varied significantly.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. RadiÄ, B. Pivac, P. DubÄek, I. KovaÄeviÄ, S. Bernstorff,