Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675685 | Thin Solid Films | 2006 | 6 Pages |
Lead dioxide thin films were grown by atomic layer deposition on Si(100) substrates. Lead diethyl-dithiocarbamate (Pb(dedtc)2), lead 2,2,6,6-tetramethyl-3,5-heptadione (Pb(thd)2) and tetraphenyl-lead (Ph4Pb) were used as lead precursors, and ozone as oxygen source. The depositions were carried out at 300–350 °C, 150–300 °C and 185–400 °C for Pb(dedtc)2, Pb(thd)2 and Ph4Pb, respectively. Attempts to use Pb(dedtc)2 as a lead-containing precursor for lead oxide thin films resulted in lead sulphate films, which reacted with the substrate and formed lead silicate during annealing. According to X-ray diffraction, films deposited from Pb(thd)2/O3 or from Ph4Pb/O3 were crystalline either orthorhombic or tetragonal lead dioxide. Surface morphology of the films were characterized by atomic force microscopy while time-of-flight elastic recoil detection analysis was used to analyse stoichiometry and possible impurities.