| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675725 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Growth and structural evolution of La0.5Sr0.5CoO3 thin films fabricated directly on SiO2/Si substrate by pulsed laser deposition were investigated. Films deposited at 780 °C and oxygen partial pressure of 2 Pa showed highly c-axis orientation. Films with low electrical resistivity of 2 × 10− 3 Ω cm were obtained by annealing at 650 °C for 40 min. C-axis oriented Ba0.5Sr0.5TiO3 thin film was then grown on the La0.5Sr0.5CoO3 film, and large dielectric tuning (> 50%) was achieved. This method may have good prospect for the integration of ferroelectric materials with conventional Si process technology.
Related Topics
Physical Sciences and Engineering
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Authors
Tianshu Wu, Binzhong Dong, Mingsen Guo, Xin Chen, Shishang Guo, Meiya Li, Xing-Zhong Zhao,