| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675760 | Thin Solid Films | 2008 | 4 Pages |
Abstract
Using reactive radio frequency magnetron sputtering, TiN/ZrN multilayers were deposited on Si (111) substrates at 550 °C. The multilayers were annealed at different temperatures ranging from 500 to 1100 °C in air. The variation of the annealed multilayers has been investigated by X-ray diffraction and transmission electron microscopy. A layer-by-layer oxidation behavior is found in the multilayers annealed at temperatures below 900 °C. The oxidation mechanism of multilayers is discussed in the paper.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
X.M. Xu, J. Wang, Q.Y. Zhang,