Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675805 | Thin Solid Films | 2008 | 5 Pages |
Abstract
Atomic geometry, electronic structure and formation energy of native defects in Zn3N2 films have been studied by means of density functional theory to interpret the different behaviors of defective Zn3N2. The effects of the vacancy and self-interstitial N on electronic and optical properties of zinc nitride were investigated, from which we conclude that N vacancy is responsible for n-type conduction character. Various defects may cause energy shift or gap change, which explains different optical band gap detected in Zn3N2 samples.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Run Long, Ying Dai, Lin Yu, Baibiao Huang, Shenghao Han,