| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675820 | Thin Solid Films | 2007 | 6 Pages |
The structure and main manufacturing technologies of CdTe film solar cells of large area are reviewed. Among the technologies, some have been developed for application in a pilot manufacturing line. The high resistant SnO2 (HRT) thin films have been fabricated by PECVD. The effects of annealing on the structure and properties have been studied. A surface etching process of CdTe in low temperature and lower concentration of nitric acid has been developed. The Cd1 − xZnxTe ternary compound films have been studied. In order to improve the back contact layer, Cd0.4Zn0.6Te layer with 1.8 eV band gap as a substitute for ZnTe layer is introduced in CdTe cells. The effects of the technologies on performance of CdTe cells and feasibility of application in the modules are discussed.
