Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675829 | Thin Solid Films | 2007 | 6 Pages |
Abstract
In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu–Ga precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from selenization of Cu–Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (± 7) kJ/mol.
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Authors
W.K. Kim, E.A. Payzant, T.J. Anderson, O.D. Crisalle,