Properties of Cu(In,Ga)(S,Se)2 thin films prepared by selenization/sulfurization of metallic alloys

Single-phase Cu(In,Ga)(S,Se)2 (CIGSS) thin films have been prepared using a two-step process consisting of annealing of Cu–In–Ga precursors in S/Se ambient. Full characterizations have been carried out using XRD, SEM, EDS, Raman spectroscopy and optical absorption measurements. The depth profiles of constituent elements Cu, In, Ga, S and Se were almost constant throughout the film. Depending on overall Ga content and recrystallization temperature CIGSS thin films exhibited a shift in band gap from 1.04 to 1.19 eV.