| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675889 | Thin Solid Films | 2007 | 4 Pages |
Abstract
The Cu(In,Ga)Se2/Mo and the Mo/glass interfaces in high efficiency thin film solar cells have been investigated by surface-sensitive photoelectron spectroscopy and bulk-sensitive X-ray emission spectroscopy. The interfaces were accessed by a suitable lift-off technique. Our experiments show a strong Se diffusion from the absorber into the Mo film, suggesting the formation of a MoSe2 layer in the surface-near region of the back contact. In addition, we find a Ga diffusion into the Mo back contact, while no diffusion of In and Cu occurs. Furthermore, we derive a detailed picture of the Na distribution near the back and front side of the Cu(In,Ga)Se2 absorber.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L. Weinhardt, M. Blum, M. Bär, C. Heske, O. Fuchs, E. Umbach, J.D. Denlinger, K. Ramanathan, R. Noufi,