| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1675945 | Thin Solid Films | 2006 | 6 Pages |
Abstract
We present a surface X-ray diffraction and Auger electron spectroscopy investigation of antimony capping layers used to protect indium antimonide and gallium antimonide epilayers. A thermally induced amorphous to polycrystalline structural transition was observed at approximately 190 °C for Sb caps on InSb(0 0 1) and GaSb(0 0 1) substrates. We conclude that 100 nm Sb caps deposited at elevated substrate temperature (150–200 °C) have superior structural order, and are able to protect III-Sb epilayers from atmospheric contamination for periods of at least a year.
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Authors
S.G. Alcock, M.J. Everard, C.L. Nicklin, J.S.G. Taylor, C.A. Norris, S.L. Bennett,