Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1675996 | Thin Solid Films | 2006 | 4 Pages |
Abstract
In this work, ZnS thin films with single-phase zinc blende structure were fabricated on silica glass substrates by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Dimethyl zinc and hydrogen sulfide were used as the precursors. The films were characterized using X-ray diffraction and photoluminescence spectroscopy. The optimal temperature for ZnS growth, 350 °C, was confirmed via a series of growth at different temperatures. In order to obtain stoichiometric ZnS films using PA-MOCVD, larger VI / II gas flow ratios was needed than the one used without plasma assistance. The reason for this phenomenon is discussed.
Related Topics
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Nanotechnology
Authors
Z.Z. Zhang, D.Z. Shen, J.Y. Zhang, C.X. Shan, Y.M. Lu, Y.C. Liu, B.H. Li, D.X. Zhao, B. Yao, X.W. Fan,