Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676153 | Thin Solid Films | 2006 | 4 Pages |
Abstract
The mechanism of alumina formation from tri-methyl aluminum (TMA) and oxygen (O2) using catalytic-chemical vapor deposition (Cat-CVD) with an iridium catalyzer was investigated by quadrupole mass spectrometry (QMS). Above 600 °C, TMA decomposed into Al and CH3. Aluminum in the presence of O2 caused a decrease in O2 and the creation of alumina on Si crystals. These results imply that O2 and Al produced AlO as expected. The iridium catalyzer was resistant to oxidation. MIS diodes with 17-nm-thick alumina gates were produced with a hysteresis shift voltage of 0.01 mV and a fixed charge density of 6.7 × 1011 cm− 2.
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Nanotechnology
Authors
Yoh-Ichiro Ogita, Toshiyuki Tomita,