Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676194 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Microcrystalline germanium carbon (μc-Ge1âxCx) films prepared by hot-wire chemical vapor deposition were characterized by Raman, Fourier transform infra-red and X-ray photoelectron spectroscopy. μc-Ge1âxCx films (x = 0.02 to 0.03 by using dimethylgermane and x = 0.07 to 0.08 by using monomethylgermane) were successfully deposited using organo-germane and hydrogen. Raman scattering measurements reveal that the microcrystalline films could be obtained with high hydrogen dilution conditions. X-ray photoelectron spectroscopy measurements suggest the possible bonding of carbon with Ge atoms in the deposited thin films. The conductivity of the films were 10â 3â¼10â 1 S/cm for microcrystalline films and 10â 8â¼10â 5 S/cm for amorphous films. The dissociation efficiency of monomethylgermane is found to be higher than that of dimethylgermane.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yasutoshi Yashiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai,