| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676233 | Thin Solid Films | 2006 | 4 Pages |
Abstract
The structural properties of poly-Si films obtained by aluminium induced crystallization (AIC) in different annealing atmospheres - N2, N2Â +Â H2 and H2 - have been studied by microprobe Raman spectroscopy, optical microscopy and X-ray diffraction spectroscopy (XRD). The Al and amorphous Si films were deposited by magnetron sputtering. The results indicate that the structure of the poly-Si films is improved when the annealing is performed in an atmosphere containing H2. The presence of H2 leads to better structural properties of poly-Si prepared by AIC. It is supposed that H2 stimulates the crystalline grain growth during annealing by increasing the diffusion rates of Al and Si.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
D. Dimova-Malinovska, V. Grigorov, M. Nikolaeva-Dimitrova, O. Angelov, N. Peev,