| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676296 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Silicon Dioxide (SiO2) thin film deposition processes were studied with the use of classical Molecular Dynamics (MD) simulations combined with Monte Carlo (MC) simulations. The MC simulations are shown to efficiently emulate thermal relaxation processes during deposition. Dependence of deposited film properties on the incident kinetic energies is examined from the numerical simulations.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Masafumi Taguchi, Satoshi Hamaguchi,