| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676305 | Thin Solid Films | 2007 | 5 Pages |
Abstract
A disadvantage of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to photo resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yasuhiro Morikawa, Tooru Koidesawa, Toshio Hayashi, Koukou Suu,