| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676308 | Thin Solid Films | 2007 | 4 Pages |
Abstract
The oxidation on nickel silicide (NiSix) during plasma etching and oxygen ashing is investigated for stable contact resistance on NiSix. NiSix exposed by various processes is observed by X-ray photoelectron spectroscopy. The oxidation on NiSix is promoted by the fluorine that remains during etching and the oxide thickness on n+ NiSix is greater than that on p+ NiSix. The remaining fluorine after etching can be decreased by in-situ nitrogen plasma treatment during the post-etching process. Therefore, the oxidation progress with exposure to air and the difference in oxidation on NiSix between n+ and p+ can be suppressed.
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Authors
S. Sakamori, K. Yonekura, N. Fujiwara, T. Kosaka, M. Ohkuni, K. Tateiwa,