Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676328 | Thin Solid Films | 2007 | 6 Pages |
Abstract
In this paper, new porous spin-on dielectric (HL02™, trademark of the LG Ltd.) was studied. The characterizations, such as thermal stability, chemical structure, dielectric constant (k) and mechanical properties (hardness and modulus), of methylsilsesquioxane (MSQ)-based dielectrics were evaluated. An optimized material (k = 2.25), characterized by a hardness and a modulus of 1.0 GPa and 6.5 GPa each in association with a porosity of 30% and a mean pore radius of 2.2 nm, was successfully integrated in damascene process with 10 levels of Cu/low-k film for 65 nm technology and beyond. Good electrical results were obtained in metal line resistance and leakage current.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kyeong-Keun Choi, Ihl Hyun Cho, Sang Jong Park, Jung Eun Lim, Oh Jin Jung, Jong Hyuk Park, Byung Seung Min, Sung Bo Hwang, Min Jin Ko, Jeong Gun Lee,