| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676346 | Thin Solid Films | 2007 | 5 Pages |
In order to improve the discharge characteristics of MgO protective layer, SiO2 was added to MgO thin films. The MgO–SiO2 thin films were deposited by electron beam evaporation method. The crystallinity and surface roughness of thin films were determined by XRD and AFM. Discharge characteristics of MgO–SiO2 protective layers were observed by changes in discharging voltages and SEE and memory coefficients as a function of Si concentration in the protective layer. The discharge characteristics of MgO–SiO2 layer were mainly affected by changes in crystallinity and surface roughness of films with Si concentration in the range of present study. With addition of 12.5 Si at.% in MgO–SiO2 protective layer, the discharge voltages and memory and SEE coefficients were considerably improved in comparison to pure MgO protective layer.
