Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution

Measurements of Ga–As–Bi liquidus composition at 600 °C for Ga–Bi–GaAs range are reported. High quality GaAs layers and Al0.28Ga0.72As/GaAs single quantum well (SQW) structures with different well thicknesses are grown from a mixed Ga + Bi solvent by low-temperature liquid-phase epitaxy method. They are characterized by the Hall effect and photoluminescence (PL) measurements. Significant changes in the layer electrical properties are observed with varying the Bi content in the solution. The layers grown from a mixed solution with 20–30% Bi content are n-type with carrier concentration of 1014 cm− 3 and mobility of 40 000 cm2/Vs at 77 K, while p-type high resistivity layers are obtained from a solution with more than 70% Bi content. PL spectra of the SQW structures grown from Ga + 25% Bi solution at 2 K show that the roughness at the interface is less than two monolayers.