| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676467 | Thin Solid Films | 2007 | 5 Pages |
Abstract
CuInGaSe2 thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
I.H. Choi, D.H. Lee,