Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676472 | Thin Solid Films | 2007 | 4 Pages |
Abstract
Polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) have been fabricated by spin-coating process and characterized. The electrical characteristics of the devices stored in dry air show obvious degradation with a smaller mobility due to oxygen effect, and lower threshold voltage. The devices present good optical response in low-light condition and optically induced memory effects, demonstrating their use as promising smart light-detection devices. Moreover, solution preparation, deposition and device measurements have been all performed in the air for the purpose of large-area applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Y.R. Liu, J.B. Peng, P.T. Lai, K.X. Yang, Y. Cao,