GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

In this paper we report on electroluminescent devices fabricated using Eu-doped GaN films grown by interrupted growth epitaxy (IGE). IGE is a combination of conventional molecular beam epitaxy and migration enhanced epitaxy. It consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N2 plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity at 620.5 nm. The nitridation of the surface that occurs during the OFF cycle appears to be the dominant process producing the enhancement. Thick dielectric devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of ∼1000 cd/m2 and luminous efficiency of ∼0.15 lm/W.