Formation of microcrystalline silicon and SiNx films by electron-beam-induced-chemical vapor deposition at ultra low temperature

We synthesized silicon films (hydrogenated microcrystalline silicon in hydrogenated amorphous silicon) and silicon nitride films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb source gases (SiH4 or Si2H6). The photoconductivity of the silicon film was 0.7 × 10− 5 Ω− 1 cm− 1 and the dark conductivity was 3.3 × 10− 5 Ω− 1 cm− 1. The dielectric constant of the silicon nitride film was estimated to be 6.5–7.0.