| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676856 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the layers were grown on Mg2Si/Si substrates. On the other hand, when the layers were grown directly on Si substrates, multiple phase growth took place and the Sr-silicide layers were heavily cracked. The structural properties of the resultant Sr-silicide layers were examined. In addition, the growth evolution of the silicide phases is described.
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Authors
Kentaro Miura, Takuya Ohishi, Takashi Inaba, Yusuke Mizuyoshi, Noriyuki Takagi, Takashi Matsuyama, Yoshimi Momose, Tadanobu Koyama, Yasuhiro Hayakawa, Hirokazu Tatsuoka,