| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676870 | Thin Solid Films | 2006 | 4 Pages |
Abstract
We have investigated the crystal structures of SiGe layers grown on Si(110) substrates. A method was developed to analyze Ge composition and strain parameters along [1¯10] and [001] directions, considering anisotropic in-plane strain relaxation process. Samples grown by solid source molecular beam epitaxy (MBE) showed that strain in SiGe layers preferentially relaxed along [1¯10] direction. However, the samples grown by gas source MBE showed formation of domains that had different lattice orientations. Result of the analysis showed that the domains tilted towards [001]/[001¯] directions, by 0.4–0.6°. It was found that the crystal structure strongly depends on growth conditions and sample structures.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Shinji Koh, Noritaka Usami,