| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676887 | Thin Solid Films | 2006 | 5 Pages |
Abstract
The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Z.M. Zhao, T.S. Yoon, W. Feng, B.Y. Li, J.H. Kim, J. Liu, O. Hulko, Y.H. Xie, H.M. Kim, K.B. Kim, H.J. Kim, K.L. Wang, C. Ratsch, R. Caflisch, D.Y. Ryu, T.P. Russell,