| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676893 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Self-assembled epitaxial NiSi2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 °C, a high density of NiSi2 nanowires was formed with an average aspect ratio of 30.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.Y. Chen, L.J. Chen,