Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676897 | Thin Solid Films | 2006 | 4 Pages |
Abstract
The relaxation of strain in Si/Si1 − xGex/Si(100) heterostructure by stripe patterning in [110] direction has been investigated using Raman scattering spectroscopy. It is found that the strain is relaxed by stripe patterning and that the degree of strain relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. Even for the 5 μm-width line, the strain relaxation was observed at 0.4 μm inside of the stripe-patterned heterostructure. Therefore, it is suggested that strain relaxation in Si1 − xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jangwoong Uhm, Masao Sakuraba, Junichi Murota,