Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676904 | Thin Solid Films | 2006 | 6 Pages |
Abstract
We present experimental and simulation results of Si self-diffusion and B diffusion in SiO2 formed directly on Si substrates by thermal oxidation. We show that both Si and B diffusion in SiO2 are enhanced by SiO generated at the Si/SiO2 interface and diffusing into SiO2. We also show that the existence of high-concentration B in SiO2 enhances SiO diffusion, which enhances both Si self-diffusion and B diffusion. This correlated diffusion of Si and B in SiO2 is consistent with the first-principles calculation results, which show that B diffuses via a complex of BSiO with frequent bond exchanges in the SiO2 network. Furthermore, based on the results, the enhancement of Si self-diffusion and B diffusion in SiO2 by compressive strain and their retardation by tensile strain are suggested.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama,