| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676923 | Thin Solid Films | 2006 | 4 Pages |
Abstract
We explore the feasibility of combining the high growth rates of the Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) process with abrupt doping profiles. To this end, we compare the low-temperature magneto-transport properties of symmetrically doped and inverted Si1 − xGex heterostructures. Very high mobility has been found in the inverted structure, indicative of sharp doping profiles with negligible dopant segregation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella, Bertram Batlogg,