| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676930 | Thin Solid Films | 2006 | 5 Pages |
Abstract
The effect of crystal quality in an Si-overlayer on photoluminescence properties of β-FeSi2 was investigated for an Si-overlayer prepared on β-FeSi2/Si by thermal CVD and plasma-enhanced CVD method. The intrinsic PL spectrum attributed to the interband transition of β-FeSi2 was observed from Si/β-FeSi2/Si double heterostructure consisted of poor-crystalline Si-overlayer.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Hiroshi Funakubo,