| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676931 | Thin Solid Films | 2006 | 4 Pages |
Abstract
Electrical properties of metal/SiC/p-Si(100) structures have been examined under conditions with and without light exposure. SiC films are formed by thermal chemical vapor deposition using a monomethylsilane gas, and are amorphous. The dark current density of the metal/SiC/p-Si structure at positive voltages is lower than that at negative voltages. The difference between the photo and dark current of metal/SiC/p-Si structures is relatively large at positive voltages. A SnO2/SiC/p-Si structure has high sensitivity compared with an Al/SiC/p-Si structure. Metal/SiC/p-Si structures can be used as photodetectors at positive voltages.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Syuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Kosuke Horikoshi, Minoru Aoki, Kenta Arima, Junichi Uchikosi, Mizuho Morita,