Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1676949 | Thin Solid Films | 2006 | 5 Pages |
Abstract
A VHF plasma for a large-area a-Si:H films deposition has been produced using the ladder-shaped electrode and the phase modulation method. These techniques enable to average the voltage distribution along the electrode by a high-speed scanning of the voltage standing wave. The effects of these techniques are demonstrated on the a-Si:H films deposition using 1.4 m × 1.1 m substrates and on the self-cleaning using NF3 plasmas. The spatial irregularity of the deposition rate is about ± 15% and the self-cleaning rate is 5 nm/s.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K. Kawamura, H. Mashima, Y. Takeuchi, A. Takano, M. Noda, Y. Yonekura, H. Takatsuka,