| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1676954 | Thin Solid Films | 2006 | 5 Pages |
Abstract
Carbon-doped silicon oxide (SiOC(-H)) films with low dielectric constant were deposited on a p-type Si(100) substrate using inductively coupled plasma chemical vapor deposition with methyltrimethoxysilane (MTMS:CH3Si(OCH3)3) precursor and oxygen gases. Fourier transform infrared spectroscopy was used to investigate the bonding configurations and atomic concentrations within the films. The dielectric constant of SiOC(-H) composite film depends on the relative carbon concentration and the content of the ring link mode in SiOC(-H) bonding structure. The lowest dielectric constant of an annealed film at 400 °C was 2.25, which was deposited with [MTMS / (MTMS + O2)] flow rate ratio of 100%.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Chang Sil Yang, Young Hun Yu, Kwang-Man Lee, Heon-Ju Lee, Chi Kyu Choi,