Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1677108 | Thin Solid Films | 2006 | 4 Pages |
Abstract
This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H.P. Feng, M.Y. Cheng, Y.L. Wang, S.C. Chang, Y.Y. Wang, C.C. Wan,