| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1677111 | Thin Solid Films | 2006 | 5 Pages |
Abstract
In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ta-Shan Chang, Ting-Chang Chang, Po-Tsun Liu, Tien-Shan Chang, Feng-Sheng Yeh,