Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1677150 | Thin Solid Films | 2006 | 6 Pages |
Abstract
This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Cheng-Hsing Hsu, Cheng-Liang Huang,